| PART |
Description |
Maker |
| HM6148HLP HM6148HLP-45 HM6148HLP-55 |
1024-word x 4-bit High Speed Static CMOS RAM
|
Hitachi Semiconductor
|
| HM6148HLP-55 HM6148HLP-45 |
1024-word x 4-bit High Speed Static CMOS RAM 1024字4位静态高速CMOS存储
|
Hitachi,Ltd.
|
| MCM1451L01 |
1024-Bit Static RAM
|
Motorola Semiconductor
|
| M5L2111 |
1024 Bit Static RAM
|
Mitsubishi
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MAC5114LE MAS5114LE MAL5114LE MAR5114LB |
Radiation hard 1024 x 4 bit static RAM
|
Dynex Semiconductor
|
| HM6167LP-8 HM6167P-6 HM6167P-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns
16384-word x 1-bit high speed CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
| HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
| UPD2101AL UPD2101AL-2 UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC
|
| IC63LV1024 IC63LV1024-8TI IC63LV1024-10B IC63LV102 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| KM684000L KM684000LG KM684000LG-L KM684000LP KM684 |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM 512Kx8位高高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
